HITK0204MP Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HITK0204MP
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
Tc = 25°C
400
300
200
2.3 A
100
0.5 A
1.2 A
0.8 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
300
250
I_D = 2.3 A
1.2 A
200
150
0.8 A
0.5 A
100
Pulse Test
V_GS = 2.5 V
50
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
V_DS = 10 V
–25°C
1
25°C
Tc = 75°C
0.1
0.01
0.01
0.1
1
10
Drain Current I_D (A)
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Tc = 25°C
V_GS = 2.5 V
100
4.5 V
10 V
10
0.1
1
10
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Case Temperature
200
Pulse Test
V_GS = 4.5 V
150
I_D = 2.3 A
1.2 A
100
0.5 A ^{0.8 A}
50
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V_GS = 0 V
1000 V_DS = 20 V
100
10
1
0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0482EJ0100 Rev.1.00
Jun 22, 2011
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