HD74HCT1G32 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – High Speed CMOS two input OR gate Using Silicon Gate CMOS Process

HD74HCT1G32
Electrical Characteristics
Item
V_CC
Symbol (V)
T_a = 25°C
Min Typ
Input voltage V_IH
4.5 to 2.0 —
5.5
V_IL
4.5 to — —
5.5
Output voltage V_OH
4.5 4.4 4.5
4.5 4.18 4.31
V_OL
4.5 — 0.0
4.5 — 0.17
Input current I_IN
Operating
I_CC
current
5.5 — —
5.5 — —
Quiescent
I_CCT
5.5 —
—
supply current
Max
—
0.8
—
—
0.1
0.26
±0.1
1.0
2.0
T_a = –40 to 85°C
Min Max ^{Unit Test Conditions}
2.0 —
V
— 0.8
4.4 —
4.13 —
— 0.1
— 0.33
— ±1.0
— 10.0
V V_IN =
I_OH = –20 µA
V_IH or V_IL I_OH = –2 mA
I_OL = 20 µA
I_OL = 2 mA
µA V_IN = V_CC or GND
µA V_IN = V_CC or GND
— 2.9 mA One input V_IN = 2.4 V,
other input V_CC or GND
Switching Characteristics
Ta = 25°C
Item
Symbol _Min
Typ
Output rise / fall time t_TLH
—
5
t_THL
Propagation delay time t_PLH
—
7.8
t_PHL
—
9.6
(C_L = 15 pF, t_r = t_f = 6 ns, V_CC = 5 V)
Max
Unit Test Conditions
10
ns
Test circuit
12
ns
Test circuit
17
Ta = 25°C
Ta = –40 to 85°C
Item
Symbol V_{CC Min Typ Max Min Max} Unit Test Conditions
Output rise / fall time t_TLH
t_THL
4.5 — 14 25 —
31
ns Test circuit
Propagation delay time t_PLH
4.5 — 10.5 16 —
20
ns Test circuit
t_PHL
4.5 — 16.0 27 —
31
Input capacitance
C_IN
— — 2.5 5 —
5
pF
Equivalent capacitance C_PD
— — 10 — —
—
pF
(C_L = 50 pF, t_r = t_f = 6 ns)
Note: C_PD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
I_CC (opr) = C_PD • V_CC • f_IN + I_CC
Rev.5.00, Jan.29.2004, page 4 of 6