HD74HCT1G04 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – High speed CMOS inverter using silicon gate CMOS process

HD74HCT1G04
Electrical Characteristics
Item
V_CC
Symbol (V)
T_a = 25°C
Min Typ
Input voltage V_IH
4.5 to 2.0 —
5.5
V_IL
4.5 to — —
5.5
Output voltage V_OH
4.5 4.4 4.5
4.5 4.18 4.31
V_OL
4.5 — 0.0
4.5 — 0.17
Input current I_IN
Operating
I_CC
current
5.5 — —
5.5 — —
Quiescent
I_CCT
5.5 —
—
supply current
Max
—
0.8
—
—
0.1
0.26
±0.1
1.0
2.0
T_a = –40 to 85°C
Min Max ^{Unit Test Conditions}
2.0 —
V
— 0.8
4.4 —
4.13 —
— 0.1
— 0.33
— ±1.0
— 10.0
V V_IN = V_IL I_OH = –20 µA
I_OH = –2 mA
V_IN = V_IH I_OL = 20 µA
I_OL = 2 mA
µA V_IN = V_CC or GND
µA V_IN = V_CC or GND
— 2.9 mA One input V_IN = 2.4 V,
other input V_CC or GND
Rev.5.00, Jan.28.2004, page 4 of 7