HAT3015R_15 Datasheet, PDF (4/6 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3015R
Electrical Characteristics
• N Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min
200
±15
—
—
1.0
—
—
—
0.56
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.6
1.9
2.4
0.86
120
29
10
10
14
24
9
0.9
Max
—
—
±10
5
2.1
2.2
2.7
5.5
—
—
—
—
—
—
—
—
1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = 200 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 0.5 A, V_GS = 10 V ^Note4
I_D = 0.5 A, V_GS = 4 V ^Note4
I_D = 2 A, V_GS = 5 V ^Note4
I_D = 0.5 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_GS = 5 V, I_D = 0.5 A,
V_DD ≅ 30 V
I_F = 0.5 A, V_GS = 0 ^Note4
• P Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 5. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min
–200
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
140
37
10
12
9
25
15
–0.9
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = –200 V, V_GS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –0.25 A, V_GS = –10 V ^Note5
I_D = –0.25 A, V_GS = –4 V ^Note5
I_D = –1 A, V_GS = –5 V ^Note5
I_D = –0.25 A, V_DS = –10 V ^Note5
V_DS = –10 V, V_GS = 0, f = 1 MHz
V_GS = –5 V, I_D = –0.25 A,
V_DD ≅ –30 V
I_F = –0.25 A, V_GS = 0 ^Note5
Rev.4.00 Apr 04, 2006 page 2 of 3