HAT2244WP_10 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2244WP
Static Drain to Source On State Resistance
vs. Temperature
50
Pulse Test
40
30
1 A, 2 A, 5 A
20
V_GS = 4.5 V
10
10 V
0
–25 0 25 50
I_D = 1 A, 2 A, 5 A
75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
0.1
di/dt = 100 A/μs
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 30 A
80
60
V_DS
V_DS = 50 V
25 V
10 V
16
V_GS 12
40
8
20
V_DS = 50 V
4
25 V
10 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Preliminary
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = –25°C
25°C
10
75°C
V_DS = 10 V
1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10 20 30
40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = 10 V, V_DS = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(on)
10
tr
td(off)
tf
1
0.1
1
10
100
Drain Current I_D (A)
REJ03G1549-0410 Rev.4.10
May 13, 2010
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