HAT2191WP_15 Datasheet, PDF (4/6 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2191WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
250
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
3.0
Forward transfer admittance
|yfs|
7
Static drain to source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
12
0.120
Max
—
1
±0.1
4.5
—
0.138
Unit
V
µA
µA
V
S
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 250 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 7 A, V_DS = 10 V ^Note4
I_D = 7 A, V_GS = 10 V^Note4
1200
185
14
30
45
60
15
27
7
10
0.86
150
—
—
—
—
—
—
—
—
—
—
1.40
—
pF V_DS = 25 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
ns I_D = 7 A
ns ^VGS ^{= 10 V}
ns ^{RL = 25 Ω}
ns ^{Rg = 17.9 Ω}
nC V_DD = 200 V
nC ^VGS ^{= 10 V}
nC ^{ID = 14 A}
V I_F = 14 A, V_GS = 0 ^Note4
ns I_F = 14 A, V_GS = 0
diF/dt = 100 A/µs
Rev.1.00, Feb.23.2005, page 2 of 3