HAT2183WP_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2183WP
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage
V_(BR)DSS
150
Zero Gate voltage Drain current
I_DSS
—
Gate to Source leak current
I_GSS
—
Gate to Source cutoff voltage
V_GS(off)
3.0
Forward transfer admittance
|yfs|
9
Static Drain to Source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Body-Drain diode forward voltage
V_DF
—
Body-Drain diode reverse recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
15
0.057
Max
—
1
±0.1
4.5
—
0.064
Unit
V
µA
µA
V
S
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 150 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 10 A, V_DS = 10 V ^Note4
I_D = 10 A, V_GS = 10 V^Note4
1200
—
pF V_DS = 25 V
260
—
pF ^VGS ^{= 0}
25
—
pF ^{f = 1 MHz}
32
—
ns I_D = 10 A
53
—
ns ^VGS ^{= 10 V}
69
—
ns ^{RL = 7.5 Ω}
11
—
ns ^{Rg = 10 Ω}
27
7
10
0.88
—
nC V_DD = 120 V
—
nC ^VGS ^{= 10 V}
—
nC ^{ID = 20 A}
1.4
V I_F = 20 A, V_GS = 0 ^Note4
110
—
ns I_F = 20 A, V_GS = 0
diF/dt = 100 A/µs
Rev.5.00, Oct 21, 2005, page 2 of 6