HAT2160H Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2160H
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
50 A
3 ^VGS ^{= 4.5 V}
I_D = 10 A, 20 A
2
10 V
1
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
I_D = 60 A
40
20
V_DD = 5 V ^VGS
10 V
20 V
16
30
12
20 ^{VDD = 20 V}
8
V_DS
10 ^{10 V}
4
5V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
300
100
Tc = -25°C
30
10
75°C
3
25°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
300
Crss
100
30
V_GS = 0
10
f = 1 MHz
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300 tf
100
30 _td(on)
td(off)
10
tr
3
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
Rev.3.00 Sep 26, 2005 page 4 of 7