HAT2071R Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2071R
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
10 A
30
V_GS = 4.5 V
20
10
10 V
I_D = 2 A, 5 A
2 A, 5 A, 10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2 5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 10 A
40
16
30
V_DS
20
10
0
0
4
V_GS
12
V_DD = 25 V
10 V
8
5V
V_DD = 25 V
4
10 V
5V
0
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
100
30
10
0
Coss
Crss
V_GS = 0
f = 1 MHz
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
200
100
50
td(off)
20
tr
td(on)
10
5
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
2
0.1 0.2 0.5 1 2
tf
5 10 20
Drain Current I_D (A)
Rev.4.00 Sep 07, 2005 page 4 of 6