HAT2038R_09 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2038R, HAT2038RJ
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
V_GS = 4 V
I_D = 5 A
1, 2 A
0.04
0
–40
10 V
0
40
1, 2, 5 A
80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 5 A
80
V_GS
16
60 _VDS
40
12
V_DD = 10 V
25 V
50 V
8
20
V_DD = 50 V
4
25 V
10 V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Preliminary
Forward Transfer Admittance vs.
Drain Current
50
V_DS = 10 V
Pulse Test
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
Crss
50
20 V_GS = 0
f = 1 MHz
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
tf
30
10
td(off)
tr
td(on)
3
1
0.1 0.2
V_GS = 10 V, V_DD = 30 V
PW = 5 μs, duty ≤ 1 %
0.5 1 2
5 10
Drain Current I_D (A)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
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