HAT2029R Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2029R
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
I_D = 5 A
V_GS = 2.5 V
2A ^1A
0.02
4V
1 A, 2 A, 5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
10
I_D = 7.5 A
40
30
V_DS
20
V_DD = 5 V
10 V
20 V
V_DD = 20 V
10 V
5V
10
8
6
4
V_GS
2
0
0
4
0
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25°C
20
25°C
10
5
75°C
2
1
0.5
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
td(off)
100
tf
tr
50
td(on)
20
10
5
0.1 0.2
V_GS = 4 V, V_DD = 10 V
PW = 3 µs, duty ≤ 1 %
0.5 1 2
5 10
Drain Current I_D (A)
Rev.6.00 Sep 07, 2005 page 4 of 7