HAT2020R Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2020R
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
I_D = 0.5 A, 1 A, 2 A
V_GS = 4 V
0.02
0
–40
10 V
0.5 A, 1 A, 2 A
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 8 A
40
16
V_DD = 5 V
10 V
30
25 V
12
V_DS
V_GS
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
10 20
30 40
50
Drain to Source Voltage V_DS (V)
1000
500
Switching Characteristics
200
tr
tf
100
td(off)
50
20
10
0.2
td(on)
0.5
V_GS = 4 V, V_DD = 10 V
PW = 3 µs, duty ≤ 1 %
12
5 10 20
Drain Current I_D (A)
Rev.12.00 Sep 07, 2005 page 4 of 6