HAT1091C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1091C
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
300
–2.5 V
200
I_D = –1.5 A
–0.8 A
–0.5 A
100 _{VGS = –4.5 V} ^{ID = –1.5, –0.5, –0.8 A}
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–20 V
–10
-2
V_DD = –5 V
–10 V
–20
V_DS
–20 V
-4
–30
V_GS
-6
I_D = –1.5 A
–40
-8
0
0.8 1.6 2.4 3.2 4
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
–8
–5 V
–10 V
–6
–4
–2
V_GS = 0, 10 V
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
3
75°C
1
25°C
0.3
0.1
–0.1
1000
300
V_DS = –10 V
Pulse Test
–0.3
–1
–3
–10
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
100
Coss
30
Crss
10
0
–10
–20
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = –4.5 V, V_DD = –10 V
R_G = 4.7 Ω, Ta = 25°C
td(off)
tr
100
td(on)
10
tf
1
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Drain Current I_D (A)
R07DS1172EJ0500 Rev.5.00
Mar 19, 2014
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