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HAT1025R Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1025R
Static Drain to Source on State Resistance
vs. Temperature
0.20
0.16
0.12
VGS = â2.5 V
â1 A, â0.5 A
ID = â2 A
0.08
â2 A, â1 A, â0.5 A
0.04
â4 V
0
â40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
â0.2
â0.5 â1
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
â2 â5 â10 â20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = â5 V
â10 V
â10
â20 V
â2
â20
VDS
VGS
â4
VDD = â20 V
â30
â10 V
â6
â5 V
â40
â8
ID = â4.5 A
â50
0
4
8
12 16
Gate Charge Qg (nc)
â10
20
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = â25°C
5
25°C
2
75°C
1
0.5
0.2
â0.2 â0.5 â1 â2
VDS = â10 V
Pulse Test
â5 â10 â20
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
â4
â8 â12 â16 â20
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
â20
â16
VGS = â5 V
â12
â8
0, 5 V
â4
Pulse Test
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Rev.10.00 Sep 07, 2005 page 4 of 7
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