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HAT1021R Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1021R
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
VGS = â2.5 V
â1 A, â2 A
ID = â5 A
0.04
â1 A, â2 A, â5 A
â4 V
0
â40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
â0.1 â0.2
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
â0.5 â1 â2 â5 â10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = â5 V
â10 V
â10
â20 V
â2
â20
VDS
VGS
â30
VDD = â20 V
â10 V
â40
â5 V
ID = â5.5 A
â50
0
8
16
24 32
Gate Charge Qg (nc)
â4
â6
â8
â10
40
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = â25°C
10
5
75°C
25°C
2
1
0.5
â0.2 â0.5 â1 â2
VDS = â10 V
Pulse Test
â5 â10 â20
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
â4
â8 â12 â16 â20
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td(off)
200
100
tr
tf
50
td(on)
20
10 VGS = â4 V, VDD = â10 V
PW = 3 µs, duty ⤠1 %
5
â0.1 â0.2 â0.5 â1 â2
â5 â10
Drain Current ID (A)
Rev.6.00 Sep 07, 2005 page 4 of 6
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