HAF2007 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2007(L), HAF2007(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
25
10 V
20
8V
6V
5V
Pulse Test
15
4V
10
V_GS = 3.5 V
5
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.20
0.15
0.10
I_D = 2 A
1A
0.05
0.5 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 07, 2005 page 4 of 8
Maximum Safe Operation Area
500
200
Thermal shut down
100
Operation area
50
20
10
5
2
1
0.5
100 _µs
Operation in
this area is
limited by R_DS
(TDc ^C=
(on)
2OP5Wp_°^{eCr=)at1io01nmmss}
Ta = 25°C
0.3
0.3 0.5 1 2 5 10 20 50 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4
Tc = –25°C
25°C
3
75°C
2
1
V_DS = 10 V
Pulse Test
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
200
100
V_GS = 4 V
50
10 V
20
Pulse Test
10
0.1 0.2 0.5 1 2
5 10 20
Drain Current I_D (A)