H7N0307AB_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0307AB
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
VDSS
VGSS
ID
ID (pulse) ^{Note 1}
IDR
Pch ^{Note 2}
θ ch-c
Tch
Tstg
Value
30
±20
60
240
60
90
1.39
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30
—
—
V ID = 10 mA, VGS = 0
±20 —
—
V IG = ±100 µA, VDS = 0
—
—
±10
µA VGS = ±16 V, VDS = 0
—
—
10
µA VDS = 30 V, VGS = 0
1.0
— 2.5
V
ID = 1 mA, VDS = 10 V ^{Note 3}
—
4.6
5.8
mΩ ID = 30 A, VGS = 10 V ^{Note 3}
—
8.0 11.5 mΩ ID = 30 A, VGS = 4.5 V ^{Note 3}
40
65
—
S
ID = 30 A, VDS = 10 V ^{Note 3}
— 2500 —
pF VDS = 10 V
— 650 —
pF VGS = 0
— 350 —
pF ^{f = 1 MHz}
—
40
—
nC VDD = 10 V
—
7
—
nC VGS = 10 V
—
8
—
nC ID = 60 A
—
20
—
— 300 —
—
70
—
ns VGS = 10 V, ID = 30 A
ns RL = 0.33 Ω
ns ^{Rg = 4.7 Ω}
—
20
—
ns
— 0.92 —
—
60
—
V IF = 60 A, VGS = 0
ns IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Rev.3.00 Sep 07, 2005 page 2 of 6