H5N5016PL_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5016PL
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Body–drain diode reverse recovery charge
Notes: 4. Pulse test
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(off)
| y_fs |
R_DS(on)
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
Qg
Qgs
Qgd
V_DF
t_rr
Q_rr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
500 ―
—
V I_D = 10 mA, V_GS = 0
—
―
10
µA V_DS = 500 V, V_GS = 0
—
― ±0.1 µA V_GS = ±30 V, V_DS = 0
1.5
―
4.0
V V_DS = 10 V, I_D = 1 mA
23
38
—
S
I_D = 25 A, V_DS = 10 V ^Note4
— 0.108 0.128 Ω I_D = 25 A, V_GS = 10 V ^Note4
— 5300 ―
pF V_DS = 25 V
— 720 ―
—
37
―
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
—
60
―
— 190 —
— 250 ―
— 240 —
ns I_D= 25 A
ns ^VGS ^{= 10 V}
ns ^{RL = 10 Ω}
ns ^{Rg = 10 Ω}
— 130 —
nC V_DD = 400 V
—
25
—
nC ^VGS ^{= 10 V}
—
50
—
nC ^{ID = 50 A}
— 1.05 1.6
V
I_F = 50 A, V_GS = 0 V ^Note4
— 230 —
—
1.5
—
ns I_F = 50 A, V_GS = 0
µC ^diF^{/dt = 100 A/µs}
REJ03G0175-0300 Rev.3.00 May 13, 2009
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