H5N2306PF Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2306PF
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
300
100
30
10
3
1
(TcD^P_=C^W_2O⁼_5p°¹_eC⁰_r)^m1_a^s_t^m_io(1^s_nsh¹_o⁰_t)⁰
10
µs
µs
0.3 _{Operation in}
0.1 ^{this area is}
limited by R_DS(on)
0.03 _{Ta = 25°C}
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
100
10 V
7V
Pulse Test
8V
80
6.5 V
60
6V
40
5.5 V
20
V_GS = 5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V _DS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
-25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00, Jun.25.2004, page 4 of 9