FY6ACH-02A Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
1.2
0.8
ID = 12A
6A
3A
0.4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 10V
Pulse Test
16
12
8
4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
Ciss
7
5
Coss
4
3
2
Crss
10²
7
5
4 ^{TCh = 25°C}
3 ^{f = 1MHZ}
2 ^{VGS = 0V}
10^–1 2 3 4 5
7 10⁰
2 3 4 5 7 10¹
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY6ACH-02A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
80
TC = 25°C
Pulse Test
64
VGS = 2.5V
48
32
4V
16
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
4
3
TC = 25°C
2
75°C
125°C
10¹
7
5
4
3
2
10⁰
7
10⁰
2 3 4 5 7 10¹
2 3 45 7
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10²
td(off)
7
tf
5
4
tr
3
2
td(on)
10¹
7
5
4
3 _{TCh = 25°C}
2 ^{VDD = 10V}
VGS = 4V
10^{0 RGEN = RGS = 50Ω}
7 10⁰ 2 3 4 5
7 10¹
2 3 45 7
DRAIN CURRENT ID (A)
Sep. 2001