FX30KMJ-3 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-3
Transfer Characteristics (Typical)
–50
–40
–30
–20
–10
0
0
Tc = 25°C
VDS = –10V
Pulse Test
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
10⁵
7 _{Tch = 25°C}
5 _{f = 1MHz}
3 V_GS = 0V
2
Ciss
10⁴
7
5
3
2
10³
7
5
Coss
3
2
Crss
10²
–10⁰ –2 –3 –5 –7 –10¹ –2 –3 –5 –7–10²
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –30A
–8
–6
VDS = –50V
–4
–80V
–100V
–2
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
5
TC = 25°C
75°C
3
125°C
2
10¹
7
5
3
2
10⁰
–7
–10⁰
–2 –3
VDS = –10V
Pulse Test
–5 –7 –10¹ –2 –3 –5 –7
Drain Current I_D (A)
Switching Characteristics (Typical)
2
10³
td(off)
7
5
3
tf
2
10²
tr
7
td(on)
5
Tch = 25°C
VGS = –10V
3
VDD = –80V
RGEN = RGS = 50Ω
2
–7
–10⁰
–2
–3
–5–7 –10¹ –2 –3
–5–7 –10² –2 –3
–5–7
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–50
VGS = 0V
Pulse Test
–40
–30
TC = 125°C
75°C
25°C
–20
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6