FS50VSJ-06 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
1.2
ID = 80A
0.8
50A
0.4
20A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
TC = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
7
5
3
Ciss
2
10³
7
5
Coss
3
Crss
2
10²
7
5
Tch = 25°C
f = 1MHZ
3
VGS = 0V
2
3
5 710⁰
23
5 7 10¹
23
5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS50VSJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
TC = 25°C
Pulse Test
40
30
VGS = 4V
20
10V
10
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
VDS = 10V
7 _{Pulse Test}
5
3
TC = 25°C
75°C
125°C
2
10¹
7
5
3
2
10⁰
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
td(off)
3
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
2
tf
10²
7
5
3 ^tr
2 _td(on)
10¹_{100 2 3 5 7 101 2 3 5 7 102}
DRAIN CURRENT ID (A)
Feb.1999