FS3VS-10 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 4A
16
3A
8
2A
1A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
VDS = 50V
8 Pulse Test
6
4
2
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
Ciss
3
2
10²
7
5
3
Coss
2
10¹
7
5
Tch = 25°C
f = 1MHz
Crss
3 ^{VGS = 0V}
2
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS3VS-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
8
VGS = 10V
6
20V
4
2
0
10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
VDS = 10V
Pulse Test
5
3
2
TC = 25°C
10⁰
7
75°C
5
125°C
3
2
10^–1
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
tf
2
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
10²
7 _td(off)
5
3
2
td(on)
10¹ tr
7
5
10^–1
23
5 7 10⁰
23
5 7 10¹
DRAIN CURRENT ID (A)
Feb.1999