FS30KM-3 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30KM-3
Transfer Characteristics (Typical)
50
Tc = 25°C
VDS = 10V
40
Pulse Test
30
20
10
0
0
4
8
12 16 20
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10⁴
7
5
3
Ciss
2
10³
7
5
3
2
Coss
10²
Crss
7 Tch = 25°C
5 f = 1MHz
3 ^VGS ^{= 0V}
2
3 5 710⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 30A
16
VDS = 50V
12
80V
100V
8
4
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7 ^{VDS = 10V}
5 ^{Pulse Test}
4
3
2
10¹
7
5
4
3
2
Tc = 25°C
75°C
125°C
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
Drain Current I_D (A)
Switching Characteristics (Typical)
10³
7
Tch = 25°C
5
4
VDD = 80V
VGS = 10V
3
RGEN = RGS = 50Ω
2
td(off)
10²
7
tf
5
4
tr
3
td(on)
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
50
VGS = 0V
Pulse Test
40
Tc = 125°C
30
20
75°C
25°C
10
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6