FS20KMA-5A Datasheet, PDF (4/5 Pages) Powerex Power Semiconductors – Nch POWER MOSFET HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
16
TC = 25°C
Pulse Test
12
8
ID =
40A
4
20A
10A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
TC = 25°C
VDS = 10V
Pulse Test
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
Ciss
2
10³
7
5
3
2
Coss
10²
7
5
Crss
3 Tch = 25°C
2 VGS = 0V
f = 1MHz
10¹
2
3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS20KMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
0.3
VGS =
0.2
10V
0.1
20V
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
5
3
2
10¹
7
5
3
TC = 25°C,75°C,125°C
2
10⁰
7
5
3
2
7
10⁰
23
5 7 10¹
VDS = 10V
Pulse Test
2 3 57
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
td(off)
2
10²
7
5
3
2
10¹
7
5
7 10⁰
23
tf
tr
td(on)
Tch = 25°C
VGS = 10V
VDD = 150V
RGEN = RGS = 50Ω
5 7 10¹ 2 3 5 7
DRAIN CURRENT ID (A)
Sep. 2001