FS10UM-10 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 15A
16
10A
8
5A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 50V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Ciss
10³
7
5
3
2
10²
Coss
7
5
3
2
10^{1 Tch = 25°C}
7
5
f = 1MHz
VGS = 0V
Crss
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10UM-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 10V
20V
1.2
0.8
0.4
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
VDS = 10V
Pulse Test
5
TC=25°C
3
75°C
2
150°C
10⁰
7
5
3
2
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
10²
7
5
3
2
10¹
10^–1 2 3
5 7 10⁰
23
td(off)
tf
tr
td(on)
5 7 10¹
DRAIN CURRENT ID (A)
Feb.1999