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CY20AAH-8F_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Nch IGBT for Strobe Flasher
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CY20AAH-8F
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Min.
450
—
—
0.4
—
—
Typ.
—
—
—
0.6
3.5
5500
Max.
—
10
±10
1.2
7.0
—
Unit
V
µA
µA
V
V
pF
(Tj = 25°C)
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCS = 0 V
IC = 1 mA, VCE = 10 V
IC = 130 A, VGE = 2.5 V
VCE = 25 V, VGS = 0 V,
f = 1MHz
Performance Curves
Maximum Collector Current vs.
Gate - Emitter Voltage
160
TC = 70°C
140 CM = 400 µF
RG = 68 Ω
120
100
80
60
40
20
0
0 1 2 3 4 56
Gate - Emitter Voltage VGE (V)
Rev.2.00, Nov 29, 2005, page 2 of 4
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