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BCR3AM-14B_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Triac Low Power Use | |||
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BCR3AM-14B
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
â
â
2.0
mA Tj = 150°C, VDRM applied
On-state voltage
VTM
â
â
1.6
V
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2
Î
VFGTÎ
â
â
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 â¦,
ÎÎ
VRGTÎ
â
â
1.5
V
RG = 330 â¦
ÎÎÎ
VRGTÎÎÎ
â
â
1.5
V
Gate trigger currentNote2
Î
IFGTÎ
â
â
30
mA Tj = 25°C, VD = 6 V, RL = 6 â¦,
ÎÎ
IRGTÎ
â
â
30
mA RG = 330 â¦
ÎÎÎ
IRGTÎÎÎ
â
â
30
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
VGD
0.2/0.1
â
Rth (j-c)
â
â
(dv/dt)c
5/1
â
â
V
Tj = 125°C/150°C,
VD = 1/2 VDRM
50
°C/W Junction to caseNote3
â
V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = â 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G1806-0100 Rev.1.00 Jul 22, 2009
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