BCR1AM-12 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE GLASS PASSIVATION TYPE

BCR1AM-12
Maximum On-State Power Dissipation
2.0
1.6
1.2
0.8
0.4
0
0
360° Conduction
Resistive,
inductive loads
0.4 0.8 1.2 1.6 2.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Curves apply
140
regardless of
conduction angle
120
Resistive,
inductive loads
100
Natural convection
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
Holding Current vs.
Junction Temperature
10³
7
Typical Example
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
140
of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
10⁵
7 _{Typical Example}
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
10³
7
5
Distribution _{T2+, G–}
3
Typical Example
2
10²
7
5
3
2
10¹
7
5 _{T2+, G+}
3
2
TT22^{––,,}
G–
G+
Typical Example
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 4 of 6