BB504M Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504M
• 900 MHz Power Gain, Noise Figure Test Circuit
V_G1 V_G2
C4
C5
V_D
C6
Input
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
Output
L3 L4
S
C1
C2
C1, C2 : Variable Capacitor (10pF MAX)
C3 : Disk Capacitor (1000pF)
C4 to C6 : Air Capacitor (1000pF)
R1 : 120 kΩ
R2 : 47 kΩ
R3 : 4.7 kΩ
L1:
10
21
L3:
29
L2:
26
L4:
18
(Φ1mm Copper wire)
Unit:mm
RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm
Rev.7.00 Aug 10, 2005 page 4 of 9