2SK2929 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2929
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
0.08
10 A
0.06
V_GS = 4 V
2, 5 A
0.04
2, 5, 10 A
0.02
0
–40
10 V
0
40
80 120 160
Case Temperature T_C (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 25 A
80
16
V_DD = 50 V
25 V
60 _VDS
10 V
12
V_GS
40
8
20
V_DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
V_DS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Typical Capacitance
vs. Drain to Source Voltage
5000
2000
1000
Ciss
500
200
Coss
100
50
Crss
20 V_GS = 0
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
td(off)
100
tf
30
tr
td(on)
10
3
1
0.1 0.3
V_GS = 10 V, V_DD = 30 V
PW = 5 µs, duty < 1 %
1 3 10 30 100
Drain Current I_D (A)
Rev.5.00 Sep 07, 2005 page 4 of 7