2SK1775 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1775
Static Drain to Source on State
Resistance vs. Temperature
5
4
V_GS = 10 V
Pulse Test
3
5A
I_D = 10 A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs,
Ta = 25°C, V_GS = 0
Pulse Test
1,000
500
200
100
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
1,000
800
600
Dynamic Input Characteristics
20
V_DD = 600 V
400 V
16
250 V
V_DS
V_GS ¹²
400
8
600 V
200
400 V
I_D = 8 A
4
V_DD = 250 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
5 ^{Pulse Test}
–25°C
T_C = 25°C
2
75°C
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
t_f
100
t_r
50
t_{d (on)}
20
10 _{VGS = 10 V, VDD =.. 30 V}
PW = 5 µs, duty < 1%
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6