2SK1671 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1671
Static Drain to Source on State
Resistance vs. Temperature
0.2
V_GS = 10 V
Pulse Test
0.16
I_D = 30 A
20 A
0.12
10 A
0.08
0.04
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 100 A/µs, V_GS = 0
10
Ta = 25°C, Pulse Test
5
0.5 1 2
5 10 20
50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 50V
400
100 V
16
200 V
300
V_GS
12
200 ^VDS
8
100
V_DD = 200 V
4
100 V
I_D = 30 A
50 V
Pulse Test
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
10
T_C = –25°C
25°C
75°C
5
2
1
0.5
0.5 1 2
5 10 20
50
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
100
t_f
t_r
50
t_{d (on)}
20
10
.
V_GS = 10 V, V_DD =. 30 V
PW = 2 µs, duty < 1%
5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6