2SK1668 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1668
Static Drain to Source on State Resistance
vs. Temperature
2.0
1.6 ^{Pulse Test}
V_GS = 10 V
1.2
0.8
0.4
I_D = 10 A
5A
2A
0
– 40
0
40 80 120 160
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20 di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
5
0.2 0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
I_D = 7 A
400
16
V_GS
300
200 ^VDS
200 V
100 V
V_DD = 50 V
100
V_DD = 200 V
100 V
50 V
0
8
16 24
32
Gate Charge Qg (nc)
12
8
4
0
40
Forward Transfer Admittance
vs. Drain Current
50
20 ^{Pulse Test}
V_DS = 10 V
10
5
–25°C
25°C
Tc = 75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Typical Capacitance vs. Drain
Source Voltage
1000
Ciss
Coss
100
Crss
10
V_GS = 0
f = 1 MHz
1
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD ^•=_• 30 V
200 ^{PW = 2 µs, duty ≤ 1 %}
100
td _(off)
50
tf
20
tr
10
td _(on)
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6