2SK1647 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1647(L), 2SK1647(S)
Static Drain to Source on State
Resistance vs. Temperature
20
V_GS = 10 V
Pulse Test
16
I_D = 3 A
12
2A
1A
8
4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
5,000
2,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
500
200
100
50
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
1,000
800
600
400
Dynamic Input Characteristics
20
V_DD = 250 V
400 V
16
600 V
12
V_DS
V_GS
8
200
V_DD = 600 V
4
400 V
250 V
I_D = 2 A
0
0
8
16
24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 20 V
Pulse Test
2
1
–25°C
0.5
T_C = 25°C
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
V_GS = 0
f = 1 MHz
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
200
100
t_{d (off)}
50
t_f
t_r
20
10
t_{d (on)}
5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 7