2SK1636 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1636(L), 2SK1636(S)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
V_GS = 10 V
0.8
0.6
I_D = 15 A
10 A
0.4
5A
0.2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
1,000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
12
5 10 20
50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 50 V
100 V
400
200 V
16
300
V_DS
200
V_GS
12
I_D = 15 A
8
100
V_DD = 200 V
4
100 V
50 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
T_C = –25°C
10
25°C
5
75°C
2
1
0.5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
V_GS = 0
f = 1 MHz
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
100
50
20
10
5
0.2
t_{d (off)}
t_f
t_r
t_{d (on)}
V_GS = 10 V, PW = 2 µs
duty < 1%
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 7