2SK1573 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1573
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
V_GS = 10 V
1.6
1.2
10 A
0.8
I_D = 20 A
0.4
5A
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
500
200
di/dt = 100 A/µs, Ta = 25°C
100
V_GS = 0
Pulse Test
50
0.5 1 2
5 10 20
50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
1,000
20
V_DD = 100 V
800
250 V
V_GS
16
400 V
600
12
V_DS
400
I_D = 15 A 8
200
V_DD = 400 V
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
10
5
T_C = –25°C
25°C
75°C
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
V_GS = 0
Crss
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
t_r
100
t_f
50
t_{d (on)}
20
10
5
0.5
V_GS = 10 V, PW = 2 µs
duty < 1%
V_DD
=•
•
30
V
12
5 10 20
50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6