2SK1403A Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1403A
Static Drain to Source on State
Resistance vs. Temperature
5
V_GS = 10 V
Pulse Test
4
3
I_D = 10 A
5A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 100 A/µs, V_GS = 0
Ta = 25°C
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
1,000
Dynamic Input Characteristics
20
800
V_DD = 100 V
250 V
16
400 V
600
12
V_GS
400
V_DS
200
8
I_D = 8 A
V_DD = 400 V
250 V
4
100 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
V_DS = 20 V
Pulse Test
20
10
Tc = –25°C
25°C
5
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
5,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
100
10
Crss
5
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
200
t_{d (off)}
100
50
t_f
20
t_r
t_{d (on)}
10
5
0.2 0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.3.00 May 15, 2006 page 4 of 6