2SK1402 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1402, 2SK1402A
Static Drain to Source on State
Resistance vs. Temperature
10
V_GS = 10 V
Pulse Test
8
6
I_D = 5 A
2A
4
1A
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
1,000
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 100 A/µs, V_GS = 0
Ta = 25°C
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
1,000
800
Dynamic Input Characteristics
20
V_DD = 100 V
250 V
400 V
16
600
400 ^VDS
200
0
0
8
12
V_GS
8
I_D = 4 A
V_DD = 400 V
250 V
4
100 V
0
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
Pulse Test
5
T_C = –25°C
25°C
75°C
2
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
V_GS = 0
f = 1 MHz
0
0
10 20
Crss
30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS
duty
=_<=110%V, ,VP_DW_{D =.=. 320}µ_Vs
200
100
50
20
t_r
10
t_{d (off)}
t_f
t_{d (on)}
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6