2SK1306 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1306
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
I_D = 20 A
0.3
0.2
0.1
0
–40
V_GS = 4 V
10 A
5A
20 A
10 A
5A
V_GS = 10 V
0
40 80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
200
Pulse Test
100
50
20
10
5
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
V_DD = 25 V
80
V_DS
50 V
80 V
V_GS
16
V_DD = 80 V
60
12
50 V
40
8
20
25 V
4
I_D = 15 A
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
10
–25°C
T_C = 25°C
75°C
5
2
1
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
td(off)
200
100
50
20
10
5
0.2
tf
tr
td(on)
V_GS = 10 V, V_DD = 30 V
PW = 2 µs, duty ≤ 1 %
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6