2SK1300 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1300
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
V_GS = 4 V
I_D = 10 A
5A
2A
10 A
5A
2A
0.2
10 V
0.1
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
di/dt = 50 A/µs
20
V_GS = 0, Ta = 25°C
Pulse Test
10
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
160
V_DD = 25 V
50 V
120
80 V
16
V_GS
12
80 V_DS
8
40
V_DD = 80 V
I_D = 10 A
4
50 V
25 V
0
0
8
16
24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
20 Pulse Test
10
T_C = –25°C
5
25°C
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
1,000
Ciss
Coss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
td(off)
200
100
tf
50
20
10
5
0.2
tr
V_GS = 10
duty < 1
V,
%
PW
V_DD
=.⁼.
2 µs
30 V
td(on)
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6