2SK1161_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1161, 2SK1162
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1161
2SK1162
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*¹
IDR
Pch*²
Tch
Tstg
Item
Symbol Min
Drain to source
breakdown voltage
2SK1161 V(BR)DSS
450
2SK1162
500
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
—
Zero gate voltage drain 2SK1161
IDSS
—
current
2SK1162
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on 2SK1161 RDS(on)
—
state resistance
2SK1162
—
Forward transfer admittance
|yfs|
4.0
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward voltage VDF
—
Body to drain diode reverse recovery trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.6
0.7
7.0
1050
280
40
15
60
90
45
1.0
350
Ratings
450
500
±30
10
30
10
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω ID = 5 A, VGS = 10 V *³
S ID = 5 A, VDS = 10 V *³
pF VDS = 10 V, VGS = 0,
pF ^{f = 1 MHz}
pF
ns ID = 5 A, VGS = 10 V,
ns ^RL ^{= 6 Ω}
ns
ns
V IF = 10 A, VGS = 0
ns IF = 10 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6