2SC5593 Datasheet, PDF (4/10 Pages) Hitachi Metals, Ltd – High gain bandwidth product

2SC5593
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
Unit
12
V
4.5
V
1
V
12
mA
50
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V_(BR)CBO
12
voltage
Collector cutoff current
I _CBO
—
Collector cutoff current
I _CEO
—
Emitter cutoff current
I _EBO
—
DC current transfer ratio
h_FE
60
Collector output capacitance Cob
—
Gain bandwidth product
f_T
20
Power gain
PG
14
Noise figure
NF
—
Typ
—
—
—
—
100
0.16
23
18
1.8
Max
—
1
1
12
140
0.4
—
—
2.3
Unit
V
µA
µA
µA
V
pF
GHz
dB
dB
Test Conditions
I_C = 10 µA , I_E = 0
V_CB = 10 V , I_E = 0
V_CE = 4 V , R_BE = ∞
V_EB = 1 V , I_C = 0
V_CE = 2 V , I_C = 10 mA
V_CB = 2 V , I_E = 0
f = 1 MHz
V_CE = 2 V , I_C = 10 mA
f = 2 GHz
V_CE = 2 V , I_C = 10 mA
f = 1.8 GHz
V_CE = 2 V , I_C = 3 mA
f = 1.8 GHz