2SC5010_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

2SC5010
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
75
7.0
TYP.
12.0
0.4
8.5
1.5
MAX.
0.1
0.1
150
0.7
2.5
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 10 mA*¹
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IE = 0 , f = 1 MHz*²
VCE = 3 V, IC = 10 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
Rank
Marking
hFE
FB
83
75 to 150
2