2SC4331_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4331,4331-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
VCEO(SUS) IC = 2.5 A, IB = 0.25 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS)
IC = 2.5 A, IB1 = −IB2 = 0.25 A,
VBE(OFF) = −1.5 V, L = 180 μH, clamped
Collector cutoff current
ICBO
VCE = 100 V, IE = 0
Collector cutoff current
ICER
VCE = 100 V, RBE = 50 Ω, TA = 125°C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = −1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = −1.5 V,
TA = 125°C
Emitter cutoff current
DC current gain ^Note
DC current gain ^Note
DC current gain ^Note
Collector saturation voltage ^Note
Collector saturation voltage ^Note
Base saturation voltage ^Note
Base saturation voltage ^Note
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT
VCE = 10 V, IE = −0.5 A
Turn-on time
Storage time
Fall time
ton
IC = 3.0 A, RL = 17 Ω,
tstg
IB1 = −IB2 = 0.15 A, VCC ≅ 50 V
Refer to the test circuit.
tf
Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%
MIN.
100
100
100
100
60
TYP.
200
60
150
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.4
Unit
V
V
μA
mA
μA
mA
μA
V
V
V
V
pF
MHz
μs
μs
μs
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16136EJ3V0DS