2SC4226_15 Datasheet, PDF (4/8 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Epitaxial Planar Transistor

2SC4226
INSERTION POWER GAIN
vs. FREQUENCY
24
VCE = 3 V
IC = 7 mA
20
16
12
8
4
0
0.1 0.2
0.5
1
2
5
Frequency f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
6
VCE = 3 V
f = 1 GHz
5
4
3
2
1
0
0.5 1
5 10
50 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
VCE = 3 V
f = 1 GHz
10
5
0
0.5 1
5 10
Collector Current IC (mA)
50 100
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
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