2SC2619 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2619
Noise Figure vs. Signal Source Resistance
12
V_CE = 6 V
10
I_C = 1 mA
f = 100 MHz
8
6
4
2
0
10 20
50 100 200 500 1000
Signal Source Resistance R_g (Ω)
Gain Bandwidth Product vs.
Collector to Emitter Voltage
400
I_C = 1 mA
300
200
100
0
1
2
5
10
20
Collector to Emitter Volgage V_CE (V)
Input/Output Admittance vs.
Collector Current
500
V_CE = 6 V
f = 455 kHz
200
100
b_oe
50 _bie
g_ie
20
g_oe
10
0.1 0.2
0.5 1.0
g_oe
g_ie
b_ie
b_oe
2
5
Collector Current I_C (mA)
Gain Bandwidth Product vs.
Collector Current
500
V_CE = 6 V
400
300
200
100
0
0.1 0.3
1.0
3
10 30
Collector Current IC (mA)
Input/Output Admittance vs.
Collector to Emitter Voltage
500
b_oe
200
g_oe
b_ie
100 ^gie
50
I_C = 1 mA
f = 455 kHz
g_ie
g_oe
b_ie
b_oe
20
10
12
5 10 20
50
Collector to Emitter Voltage V_CE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
500
200
b_re
b_fe
100 _gfe
50
I_C = 1 mA
f = 455 kHz
g_fe
b_fe
b_re
20
10
12
5 10 20
50
Collector to Emitter Voltage V_CE (V)
Rev.2.00 Aug 10, 2005 page 4 of 8