2SC2334_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – SILICON POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
VCEX(SUS)1
VCEX(SUS)2
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = 5.0 A, IB1 = 0.5 A, L = 1 mH
IC = 5.0 A, IB1 = −IB2 = 0.5 A,
VBE(OFF) = −5.0 V, L = 180 µH, clamped
IC = 10 A, IB1 = 1.0 A, IB2 = −0.5 A,
VBE(OFF) = −5.0 V, L = 180 µH, clamped
VCB = 100 V, IE = 0 A
VCE = 100 V, RBE = 51 Ω, TA = 125°C
VCE = 100 V, VBE(OFF) = −1.5 V
VCE = 100 V, VBE(OFF) = −1.5 V,
TA = 125°C
VEB = 5.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.5 A^Note
VCE = 5.0 V, IC = 3.0 A^Note
VCE = 5.0 V, IC = 5.0 A^Note
IC = 5.0 A, IB = 0.5 A^Note
IC = 5.0 A, IB = 0.5 A^Note
IC = 5.0 A, RL = 10 Ω,
IB1 = −IB2 = −0.5 A, VCC ≅ 50 V
Refer to the test circuit.
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SC2334
MIN.
TYP.
MAX.
Unit
100
V
100
V
100
V
10
µA
1.0
mA
10
µA
1.0
mA
10
µA
40
40
200
20
0.6
V
1.5
V
0.5
µs
1.5
µs
0.5
µs
Base current
waveform
Collector current
waveform
2
Data Sheet D14902EJ2V1DS