2SC1623-T1B-A Datasheet, PDF (4/7 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

<R> TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
180
Free air
160
140
120
100
80
60
40
20
0
–20 0 20 40 60 80 100 120 140 160 180
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
80
10.000.0.9.8.76
0.5
60
0.4
0.3
40
0.2
20
IB = 0.1 mA
0
0
0
0.4
0.8
1.2
1.6
2.0
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
500
300
100
50
30
VCE = 6.0 V
1.0 V
0.5 V
10
5
3
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC - Collector Current - mA
50 100
2SC1623
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
45
40
8
35
30
6
25
20
4
15
10
2
IB = 5.0 μA
0
0
0
10
20
30
40
50
VCE - Collector to Emitter Voltage - V
1000
500
300
100
50
30
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 6.0 V
Pulsed
TA = 75˚C
25˚C
–25˚C
10
5
3
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC - Collector Current - mA
50 100
2
Data Sheet D17115EJ5V0DS