2SA1744 Datasheet, PDF (4/8 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = −8.0 A, IB = −0.8 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = −8.0 A, IB1 = −IB2 = −0.8 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO
VCB = −60 V, IE = 0
Collector cutoff current
ICER
VCE = −60 V, RBE = 50 Ω, TA = 125°C
Collector cutoff current
ICEX1
VCE = −60 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
DC current gain
hFE1* VCE = −2.0 V, IC = −1.5 A
DC current gain
hFE2* VCE = −2.0 V, IC = −3.0 A
DC current gain
hFE3* VCE = −2.0 V, IC = −8.0 A
Collector saturation voltage VCE(sat)1* IC = −8.0 A, IB = −0.4 A
Collector saturation voltage VCE(sat)2* IC = −12 A, IB = −0.6 A
Base saturation voltage
VBE(sat)1* IC = −8.0 A, IB = −0.4 A
Base saturation voltage
VBE(sat)2* IC = −12 A, IB = −0.6 A
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT
VCE = −10 V, IC = −1.5 A
Turn-on time
Storage time
Fall time
ton
IC = −8.0 A, RL = 6.3 Ω,
tstg
IB1 = −IB2 = −0.4 A, VCC ≅ −50 V
Refer to the test circuit.
tf
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Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
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MIN.
TYP.
MAX.
Unit
−60
V
−60
V
−10
µA
−1.0
mA
−10
µA
−1.0
mA
−10
µA
100
100
400
60
−0.3
V
−0.5
V
−1.2
V
−1.5
V
300
pF
80
MHz
0.3
µs
1.5
µs
0.3
µs
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